PART |
Description |
Maker |
S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 1G X 1 FLASH 3V PROM, 120 ns, PDSO56 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
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Spansion, Inc. SPANSION LLC
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ADP3408 ADP3408ACP-1.8-RL ADP3408ACP-1.8-RL7 ADP34 |
GSM Power Management System 28-Lead DashDSP ROM-based Mixed Signal DSP with 5 Analog Input Channels plus 1 Dedicated Isense Input From old datasheet system
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Analog Devices
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K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48 4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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SEMIKRON http:// Samsung semiconductor
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W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
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Winbond Electronics WINBOND[Winbond]
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ADMCF327 ADMCF327-EVALKIT ADMCF327BR |
28-Lead Flash Memory DSP Switched Reluctance Motor Controller
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Analog Devices
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ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列 EIGHT DARLINGTON ARRAYS
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STMicroelectronics N.V. Allegro MicroSystems STMICROELECTRONICS[STMicroelectronics]
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CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory 150ns 2M-bit CMOS boot block flash memory 120ns 2M-bit CMOS boot block flash memory 2 Megabit CMOS Boot Block Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
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http:// CATALYST[Catalyst Semiconductor]
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HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48 Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
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http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
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Intel, Corp. Intel Corp.
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MB84VA2007-10 MB84VA20 MB84VA2006 MB84VA2006-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM
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Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
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AM41DL16X4D AM41DL1614DT70IS SPANSIONLLC-AM41DL162 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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http:// ADVANCED MICRO DEVICES INC SPANSION LLC Advanced Micro Devices, Inc.
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HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63 150 x 32 pixel format, LED Backlight available ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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